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IPI25N06S3-25
- Manufacturer's Part No.:IPI25N06S3-25
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 55V 25A TO-262
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3667
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- Available: 3667
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPI25N06S3-25
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2007
- Rise Time27ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating25A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ)27 ns
- Terminal FinishMATTE TIN
- Power Dissipation48W
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 20μA
- Voltage - Rated DC55V
- Turn-Off Delay Time16 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max48W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs25.1m Ω @ 15A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)60 mJ
- Continuous Drain Current (ID)25A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds1862pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C25A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSIP-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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