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IPI25N06S3L-22
- Manufacturer's Part No.:IPI25N06S3L-22
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 55V 25A I2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 8910
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- Available: 8910
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPI25N06S3L-22
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2007
- Rise Time26ns
- Vgs (Max)±16V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating25A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ)43 ns
- Terminal FinishMATTE TIN
- Power Dissipation50W
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2.2V @ 20μA
- Voltage - Rated DC55V
- Turn-Off Delay Time30 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max50W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs21.6m Ω @ 17A, 10V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)120 mJ
- Continuous Drain Current (ID)25A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0216Ohm
- Pulsed Drain Current-Max (IDM)100A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Current - Continuous Drain (Id) @ 25°C25A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSIP-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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