IPI45P03P4L11AKSA1
- Manufacturer's Part No.:IPI45P03P4L11AKSA1
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- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET P-CH 30V 45A TO262-3
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- In Stock: 3552
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- Available: 3552
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPI45P03P4L11AKSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountThrough Hole
- FET TypeP-Channel
- Lead FreeContains Lead
- PackagingTube
- Published2008
- Rise Time3ns
- Vgs (Max)+5V, -16V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ)14 ns
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time7 ns
- Vgs(th) (Max) @ Id2V @ 85μA
- Turn-Off Delay Time45 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max58W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs11.1m Ω @ 45A, 10V
- Max Dual Supply Voltage-30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
- Gate to Source Voltage (Vgs)5V
- Avalanche Energy Rating (Eas)110 mJ
- Continuous Drain Current (ID)45A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.0111Ohm
- Pulsed Drain Current-Max (IDM)180A
- Input Capacitance (Ciss) (Max) @ Vds3770pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C45A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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