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IPN80R2K4P7ATMA1

  • In Stock: 6000
  • Available: 5453

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.95790US $0.96
10+US $0.63860US $6.39
30+US $0.47895US $14.37
100+US $0.38316US $38.32
500+US $0.35123US $175.61
1000+US $0.31930US $319.30

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPN80R2K4P7ATMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    CoolMOS™ P7
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-261-3
  • Case Connection
    DRAIN
  • Factory Lead Time
    18 Weeks
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    3.5V @ 40μA
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    6.3W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    2.4 Ω @ 800mA, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    800V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    7.5nC @ 10V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    800V
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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