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IPP048N12N3GXKSA1

  • Available: 1448

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $10.30000US $10.30
10+US $9.27000US $92.70
30+US $7.21000US $216.30
100+US $5.92250US $592.25
500+US $5.66500US $2832.50
1000+US $5.15000US $5150.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPP048N12N3GXKSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    2008
  • Rise Time
    55ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Fall Time (Typ)
    19 ns
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    13 Weeks
  • Power Dissipation
    300W
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Turn On Delay Time
    31 ns
  • Vgs(th) (Max) @ Id
    4V @ 230μA
  • Turn-Off Delay Time
    64 ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    300W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    4.8m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    120V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    182nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    740 mJ
  • Continuous Drain Current (ID)
    100A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0048Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Input Capacitance (Ciss) (Max) @ Vds
    12000pF @ 60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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