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IPP054NE8NGHKSA2
- Manufacturer's Part No.:IPP054NE8NGHKSA2
- Manufacturer:
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- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 85V 100A TO-220
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3618
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- Available: 3618
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPP054NE8NGHKSA2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTube
- Published2008
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Surface MountNO
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Terminal PositionSINGLE
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 250μA
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max300W Tc
- Reach Compliance Codecompliant
- Number of Terminations3
- Rds On (Max) @ Id, Vgs5.4m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min85V
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)100A
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Avalanche Energy Rating (Eas)826 mJ
- Drain to Source Voltage (Vdss)85V
- Drain-source On Resistance-Max0.0054Ohm
- Pulsed Drain Current-Max (IDM)400A
- Input Capacitance (Ciss) (Max) @ Vds12100pF @ 40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- JESD-30 CodeR-PSFM-T3
- Moisture Sensitivity Level (MSL)3 (168 Hours)
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