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IPP05N03LA
- Manufacturer's Part No.:IPP05N03LA
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 25V 80A TO-220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3731
- Price: please call
- Available: 3731
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPP05N03LA
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- PackagingTube
- Pin Count3
- Published2003
- Rise Time27ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Current Rating80A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Fall Time (Typ)4.6 ns
- Terminal FinishMATTE TIN
- Power Dissipation94W
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 50μA
- Voltage - Rated DC25V
- Turn-Off Delay Time32 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max94W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs4.9m Ω @ 55A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)190 mJ
- Continuous Drain Current (ID)80A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0081Ohm
- Pulsed Drain Current-Max (IDM)385A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds3110pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C80A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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