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IPP065N06LGAKSA1
- Manufacturer's Part No.:IPP065N06LGAKSA1
- Manufacturer:
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- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 60V 80A TO-220
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- Quantity:RFQAdd to RFQ List
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- In Stock: 3937
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- Available: 3937
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IPP065N06LGAKSA1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- FET TypeN-Channel
- PackagingTube
- Pin Count3
- Published2011
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Surface MountNO
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 180μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max250W Tc
- Reach Compliance Codeunknown
- Number of Terminations3
- Rds On (Max) @ Id, Vgs6.5m Ω @ 80A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)80A
- Gate Charge (Qg) (Max) @ Vgs157nC @ 10V
- Avalanche Energy Rating (Eas)530 mJ
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max0.0065Ohm
- Pulsed Drain Current-Max (IDM)320A
- Input Capacitance (Ciss) (Max) @ Vds5100pF @ 30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C80A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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