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IPP086N10N3GHKSA1

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Description

The IPP086N10N3GHKSA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power electronics, including automotive, industrial, and consumer electronics.

Key Features:

  1. Voltage Rating: The IPP086N10N3GHKSA1 has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle significant voltage levels in various applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 86A, which makes it capable of managing high power loads effectively.

  3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

  5. Package Type: The device is housed in a TO-220 package, which provides good thermal performance and ease of mounting on heatsinks, facilitating effective heat dissipation.

  6. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, ensuring that the device can operate at higher temperatures without compromising performance.

  7. Switching Speed: The IPP086N10N3GHKSA1 features fast switching capabilities, making it suitable for high-frequency applications, such as DC-DC converters and motor drives.

  8. Robustness: The MOSFET is designed to withstand harsh operating conditions, with built-in protection features against over-voltage and over-current situations.

Applications:

  • Power Supplies: Ideal for use in switch-mode power supplies (SMPS) and other power conversion applications.
  • Motor Control: Suitable for driving electric motors in various industrial and automotive applications.
  • DC-DC Converters: Effective in buck, boost, and buck-boost converter designs due to its high efficiency and fast switching characteristics.
  • Inverters: Can be used in inverter circuits for renewable energy systems, such as solar inverters.

Conclusion:

The IPP086N10N3GHKSA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that meets the demands of modern power electronics applications. Its combination of high current handling, low on-resistance, and robust thermal performance makes it an excellent choice for engineers looking to optimize their designs for efficiency and reliability.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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