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IPT007N06NATMA1

  • In Stock: 11424
  • Available: 26964

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $21.46000US $21.46
10+US $16.09500US $160.95
30+US $13.94900US $418.47
100+US $12.33950US $1233.95
500+US $11.58840US $5794.20
1000+US $10.73000US $10730.00

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Description

The IPT007N06NATMA1 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.

Key Features:

  1. Voltage Rating: The IPT007N06NATMA1 typically has a maximum drain-source voltage (V_DS) rating of 60V, allowing it to handle a wide range of voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 70A, which makes it capable of managing significant power loads without overheating.

  3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, often around 7 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, which allows for easy interfacing with low-voltage control signals.

  5. Package Type: The IPT007N06NATMA1 is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.

  6. Thermal Resistance: The thermal resistance from junction to case (R_θJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.

  7. Switching Performance: This MOSFET is designed for fast switching applications, making it suitable for high-frequency operation in power converters and inverters.

  8. Robustness: The device is built to withstand harsh operating conditions, featuring a rugged design that includes protection against over-voltage and thermal runaway.

Applications:

The IPT007N06NATMA1 is widely used in various applications, including:

  • DC-DC Converters: Its efficiency and fast switching capabilities make it ideal for use in step-down (buck) and step-up (boost) converters.
  • Motor Control: It is suitable for driving DC motors and brushless DC motors in industrial and automotive applications.
  • Power Management: The MOSFET can be used in power supply circuits for computers, servers, and other electronic devices requiring efficient power conversion.
  • LED Drivers: Its low on-resistance and high current handling make it a good choice for driving high-power LED arrays.

Conclusion:

The IPT007N06NATMA1 from Infineon Technologies is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of high current capacity, low on-resistance, and robust thermal performance makes it an excellent choice for engineers looking to optimize power management in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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