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IPW65R190C7XKSA1

  • Available: 31827

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $5.94326US $5.94
10+US $5.34893US $53.49
30+US $4.16028US $124.81
100+US $3.41737US $341.74
500+US $3.26879US $1634.40
1000+US $2.97163US $2971.63

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IPW65R190C7XKSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    CoolMOS™ C7
  • ECCN
    EAR99
  • Mount
    Through Hole
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2008
  • Vgs (Max)
    ±20V
  • Rds On Max
    190 mΩ
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Fall Time (Typ)
    9 ns
  • Factory Lead Time
    18 Weeks
  • Input Capacitance
    1.15nF
  • Power Dissipation
    72W
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    4V @ 290μA
  • Turn-Off Delay Time
    54 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    72W Tc
  • Rds On (Max) @ Id, Vgs
    190mOhm @ 5.7A, 10V
  • Max Dual Supply Voltage
    650V
  • Supplier Device Package
    PG-TO247-3
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    404mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    13A
  • Drain to Source Voltage (Vdss)
    650V
  • Input Capacitance (Ciss) (Max) @ Vds
    1150pF @ 400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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