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IR11662SPBF

  • In Stock: 700000
  • Available: 2868

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.98600US $1.99
10+US $1.32400US $13.24
30+US $0.99300US $29.79
100+US $0.79440US $79.44
500+US $0.72820US $364.10
1000+US $0.66200US $662.00

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  • Description
  • Alternatives
  • Shopping Guide
Description
Description IR11662 is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback and resonant half-bridge converters.
The IC can control one or more paralleled N MOSFETs to emulate the behavior of Schottky diode rectifiers.
The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition.
The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes.
Features
• Secondary side high speed SR controller
• DCM, CrCM flyback and Resonant half-bridge topologies
• 200 V proprietary IC technology
• Max 500 KHz switching frequency
• Anti-bounce logic and UVLO protection
• 4A peak turn off drive current
• Micropower start-up & ultra low quiescent current
• 10.7 V gate drive clamp
• 50ns turn-off propagation delay
• Vcc range from 11.3 V to 20 V
• Direct sensing of MOSFET drain voltage
• Enable function synchronized with MOSFET VDS transition
• Cycle by Cycle MOT Check Circuit prevents multiple false trigger GATE pulses
• Lead-free
• Compatible with 0.3 W Standby, Energy Star, CECP, etc.Typical Applications
• LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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