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IRF1324LPBF

  • Available: 3834

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF1324LPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.826mm
  • Height
    9.65mm
  • Length
    10.668mm
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Published
    2009
  • Rise Time
    190ns
  • Vgs (Max)
    ±20V
  • Rds On Max
    1.65 mΩ
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Fall Time (Typ)
    120 ns
  • Input Capacitance
    7.59nF
  • Power Dissipation
    300W
  • Turn On Delay Time
    17 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    83 ns
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    300W Tc
  • Rds On (Max) @ Id, Vgs
    1.65mOhm @ 195A, 10V
  • Supplier Device Package
    TO-262
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    1.65mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    340A
  • Drain to Source Voltage (Vdss)
    24V
  • Drain to Source Breakdown Voltage
    24V
  • Input Capacitance (Ciss) (Max) @ Vds
    7590pF @ 24V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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