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IRF1404ZSTRLPBF
- Manufacturer's Part No.:IRF1404ZSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 40V 180A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 82783
- Available: 4800
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.16902 | US $2.17 |
10+ | US $1.95212 | US $19.52 |
30+ | US $1.51831 | US $45.55 |
100+ | US $1.24719 | US $124.72 |
500+ | US $1.19296 | US $596.48 |
1000+ | US $1.08451 | US $1084.51 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF1404ZSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2003
- Rise Time110ns
- Vgs (Max)±20V
- Resistance3.7MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time42 ns
- Terminal FormGULL WING
- Current Rating75A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)58 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation200W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id4V @ 150μA
- Voltage - Rated DC40V
- Radiation HardeningNo
- Turn-Off Delay Time36 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max200W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs3.7m Ω @ 75A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)190A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds4340pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C180A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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