IRF3205ZLPBF
- Manufacturer's Part No.:IRF3205ZLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 75A TO-262
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 134951
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.13840 | US $2.14 |
10+ | US $1.42560 | US $14.26 |
30+ | US $1.06920 | US $32.08 |
100+ | US $0.85536 | US $85.54 |
500+ | US $0.78408 | US $392.04 |
1000+ | US $0.71280 | US $712.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF3205ZLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.65mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2001
- Rise Time95ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating75A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Case ConnectionDRAIN
- Fall Time (Typ)67 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation170W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC55V
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max170W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs6.5m Ω @ 66A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)250 mJ
- Continuous Drain Current (ID)75A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0065Ohm
- Pulsed Drain Current-Max (IDM)440A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds3450pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C75A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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