IRF3205ZSTRLPBF
- Manufacturer's Part No.:IRF3205ZSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 75A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 240000
- Available: 90868
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.10000 | US $3.10 |
10+ | US $2.79000 | US $27.90 |
30+ | US $2.17000 | US $65.10 |
100+ | US $1.78250 | US $178.25 |
500+ | US $1.70500 | US $852.50 |
1000+ | US $1.55000 | US $1550.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF3205ZSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2001
- Rise Time95ns
- Vgs (Max)±20V
- Resistance6.5MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs20 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)67 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation170W
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max170W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs6.5m Ω @ 66A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)250 mJ
- Continuous Drain Current (ID)75A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)440A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds3450pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C75A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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