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IRF3205Z

  • Available: 3629

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF3205Z
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Published
    2001
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Surface Mount
    NO
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    170W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    6.5m Ω @ 66A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    55V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    75A
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Avalanche Energy Rating (Eas)
    250 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    55V
  • Drain-source On Resistance-Max
    0.0065Ohm
  • Pulsed Drain Current-Max (IDM)
    440A
  • Input Capacitance (Ciss) (Max) @ Vds
    3450pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PSFM-T3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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