IRF3415STRLPBF
- Manufacturer's Part No.:IRF3415STRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 150V 43A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 60000
- Available: 67482
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.91300 | US $2.91 |
10+ | US $1.94200 | US $19.42 |
30+ | US $1.45650 | US $43.70 |
100+ | US $1.16520 | US $116.52 |
500+ | US $1.06810 | US $534.05 |
1000+ | US $0.97100 | US $971.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF3415STRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published1998
- Rise Time55ns
- Vgs (Max)±20V
- Resistance4.2MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time390 ns
- Terminal FormGULL WING
- Current Rating43A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)69 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation3.8W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC150V
- Dual Supply Voltage150V
- Radiation HardeningNo
- Turn-Off Delay Time71 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 200W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs42m Ω @ 22A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)590 mJ
- Continuous Drain Current (ID)43A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage150V
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C43A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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