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IRF353

  • Available: 24390

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.96000US $3.96

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Product Parameter

  • Manufacturer
    Harris
  • Manufacturer's Part No.
    IRF353
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Mfr
    Harris Corporation
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • FET Feature
    -
  • REACH Status
    Vendor Undefined
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs
    400mOhm @ 8A, 10V
  • Supplier Device Package
    TO-3
  • Gate Charge (Qg) (Max) @ Vgs
    120 nC @ 10 V
  • Drain to Source Voltage (Vdss)
    350 V
  • Input Capacitance (Ciss) (Max) @ Vds
    2000 pF @ 25 V
  • Current - Continuous Drain (Id) @ 25°C
    13A (Tc)

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS non-compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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