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IRF3709ZLPBF
- Manufacturer's Part No.:IRF3709ZLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 87A TO-262
- Datasheet:
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- In Stock: 3981
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- Available: 3981
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF3709ZLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.65mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time41ns
- Vgs (Max)±20V
- Rds On Max6.3 mΩ
- Resistance6.3MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating87A
- Number of Pins3
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ)4.7 ns
- Input Capacitance2.13nF
- Power Dissipation79W
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id2.25V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max79W Tc
- Rds On (Max) @ Id, Vgs6.3mOhm @ 21A, 10V
- Supplier Device PackageTO-262
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Drain to Source Resistance6.3mOhm
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)87A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds2130pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C87A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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