IRF3710L
- Manufacturer's Part No.:IRF3710L
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 57A TO-262
- Datasheet:
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- Available: 3718
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF3710L
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- FET TypeN-Channel
- HTS Code8541.29.00.95
- PackagingTube
- Published2007
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Surface MountNO
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 250μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max200W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs23m Ω @ 28A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)57A
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Avalanche Energy Rating (Eas)280 mJ
- Peak Reflow Temperature (Cel)225
- Drain to Source Voltage (Vdss)100V
- Drain-source On Resistance-Max0.023Ohm
- Pulsed Drain Current-Max (IDM)180A
- Input Capacitance (Ciss) (Max) @ Vds3130pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C57A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSIP-T3
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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