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IRF3710PBF
- Manufacturer's Part No.:IRF3710PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 57A TO-220AB
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 163419
- Available: 1082
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.89430 | US $0.89 |
10+ | US $0.59620 | US $5.96 |
30+ | US $0.44715 | US $13.41 |
100+ | US $0.35772 | US $35.77 |
500+ | US $0.32791 | US $163.95 |
1000+ | US $0.29810 | US $298.10 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF3710PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height19.8mm
- Length10.54mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time58ns
- Vgs (Max)±20V
- Lead Pitch2.54mm
- Resistance23MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time220 ns
- Current Rating57A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)47 ns
- Factory Lead Time12 Weeks
- Power Dissipation200W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max200W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs23m Ω @ 28A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)280 mJ
- Continuous Drain Current (ID)57A
- Max Junction Temperature (Tj)175°C
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds3130pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C57A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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