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IRF3710PBF

  • In Stock: 20000
  • Available: 1082

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.72306US $0.72
10+US $0.48204US $4.82
30+US $0.36153US $10.85
100+US $0.28922US $28.92
500+US $0.26512US $132.56
1000+US $0.24102US $241.02

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF3710PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.69mm
  • Height
    19.8mm
  • Length
    10.54mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    58ns
  • Vgs (Max)
    ±20V
  • Lead Pitch
    2.54mm
  • Resistance
    23MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    220 ns
  • Current Rating
    57A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    47 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    200W
  • Threshold Voltage
    4V
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    100V
  • Dual Supply Voltage
    100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    45 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    200W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 28A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • Continuous Drain Current (ID)
    57A
  • Max Junction Temperature (Tj)
    175°C
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    3130pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    57A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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