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IRF5210LPBF

  • Available: 480

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.63750US $2.64
10+US $2.37375US $23.74
30+US $1.84625US $55.39
100+US $1.51656US $151.66
500+US $1.45063US $725.32
1000+US $1.31875US $1318.75

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF5210LPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.69mm
  • Height
    9.652mm
  • Length
    10.54mm
  • FET Type
    P-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tube
  • Published
    1998
  • Rise Time
    63ns
  • Vgs (Max)
    ±20V
  • Resistance
    60mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Current Rating
    -40A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    55 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    200W
  • Threshold Voltage
    4V
  • Additional Feature
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    14 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    -100V
  • Dual Supply Voltage
    100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    72 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    3.1W Ta 170W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 38A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    230nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    -40A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    -100V
  • Input Capacitance (Ciss) (Max) @ Vds
    2780pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    38A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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