![](/images/home/default.png)
![icon](/images/products/arrowIcon.webp)
![icon](/images/products/fsr.webp)
IRF5305STRLPBF
- Manufacturer's Part No.:IRF5305STRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 55V 31A D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 33127
- Available: 116452
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.67490 | US $1.67 |
10+ | US $1.11660 | US $11.17 |
30+ | US $0.83745 | US $25.12 |
100+ | US $0.66996 | US $67.00 |
500+ | US $0.61413 | US $307.07 |
1000+ | US $0.55830 | US $558.30 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF5305STRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height5.084mm
- Length10.668mm
- FET TypeP-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2005
- Rise Time66ns
- Vgs (Max)±20V
- Resistance60mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-4 V
- Part StatusActive
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252
- Mounting TypeSurface Mount
- Recovery Time110 ns
- Terminal FormGULL WING
- Current Rating-31A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)63 ns
- Factory Lead Time12 Weeks
- Power Dissipation110W
- Threshold Voltage-4V
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
- Number of Channels1
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-55V
- Dual Supply Voltage-55V
- Radiation HardeningNo
- Turn-Off Delay Time39 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 110W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs60m Ω @ 16A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)280 mJ
- Continuous Drain Current (ID)-31A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)55V
- Drain to Source Breakdown Voltage-55V
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C31A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
SHIPPING GUIDE
Shipping Methods
Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.
Shipping Cost
Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.
Delivery Time
We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.
Professional Platform
Full-speed Delivery
Wide Variety of Products
365 Days of Quality Assurance