IRF540NSTRLPBF
- Manufacturer’s Part#:IRF540NSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 100V 33A D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 93664
- Available: 115252
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.79431 | US $0.79 |
10+ | US $0.52954 | US $5.30 |
30+ | US $0.39716 | US $11.91 |
100+ | US $0.31772 | US $31.77 |
500+ | US $0.29125 | US $145.63 |
1000+ | US $0.26477 | US $264.77 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF540NSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published1997
- Rise Time35ns
- Vgs (Max)±20V
- Resistance44MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time170 ns
- Terminal FormGULL WING
- Current Rating33A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)35 ns
- Factory Lead Time12 Weeks
- Power Dissipation130W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time39 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max130W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs44m Ω @ 16A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)33A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds1960pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C33A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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