IRF540NSTRLPBF
- Manufacturer's Part No.:IRF540NSTRLPBF
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- Series:HEXFET®
- Description:MOSFET N-CH 100V 33A D2PAK
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- In Stock: 27252
- Available: 115252
- Updated: 14 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.64994 | US $0.65 |
10+ | US $0.43330 | US $4.33 |
30+ | US $0.32497 | US $9.75 |
100+ | US $0.25998 | US $26.00 |
500+ | US $0.23831 | US $119.16 |
1000+ | US $0.21665 | US $216.65 |
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The IRF540NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications and is widely used in various electronic circuits, including power supplies, motor drivers, and other high-current applications.
Key Features:
- Type: N-channel MOSFET
- Package: The IRF540NSTRLPBF is typically available in a TO-220 package, which is a standard package for power transistors, providing good thermal performance and ease of mounting.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V, making it suitable for applications that require high voltage handling.
- Current Rating: It can handle a continuous drain current (I_D) of up to 33A at a temperature of 25°C, which allows it to drive significant loads.
- R_DS(on): The on-resistance (R_DS(on)) is typically around 0.044 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which indicates the minimum gate voltage required to turn the MOSFET on.
- Switching Speed: The IRF540NSTRLPBF features fast switching capabilities, making it suitable for high-frequency applications.
- Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding thermal environments. It also has a thermal resistance from junction to case (RθJC) that ensures effective heat dissipation.
- Body Diode: The MOSFET includes an intrinsic body diode, which allows for current flow in the reverse direction, useful in applications like H-bridge configurations for motor control.
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Control: Ideal for driving DC motors and other inductive loads due to its fast switching and high current capabilities.
- Inverters: Commonly found in inverter circuits for renewable energy applications, such as solar inverters.
- Lighting: Utilized in LED drivers and other lighting control applications.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): Maximum of ±20V.
- Drain-Source Breakdown Voltage (V(BR)DSS): 100V minimum.
- Input Capacitance (C_iss): Typically around 1,200 pF, which affects the gate drive requirements.
Conclusion:
The IRF540NSTRLPBF is a robust and versatile N-channel MOSFET that offers high performance in power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for a wide range of electronic applications.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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