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IRF540NSTRLPBF

  • In Stock: 27252
  • Available: 115252
  • Updated: 14 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.64994US $0.65
10+US $0.43330US $4.33
30+US $0.32497US $9.75
100+US $0.25998US $26.00
500+US $0.23831US $119.16
1000+US $0.21665US $216.65

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Description

The IRF540NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications and is widely used in various electronic circuits, including power supplies, motor drivers, and other high-current applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The IRF540NSTRLPBF is typically available in a TO-220 package, which is a standard package for power transistors, providing good thermal performance and ease of mounting.
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V, making it suitable for applications that require high voltage handling.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 33A at a temperature of 25°C, which allows it to drive significant loads.
  5. R_DS(on): The on-resistance (R_DS(on)) is typically around 0.044 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which indicates the minimum gate voltage required to turn the MOSFET on.
  7. Switching Speed: The IRF540NSTRLPBF features fast switching capabilities, making it suitable for high-frequency applications.
  8. Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding thermal environments. It also has a thermal resistance from junction to case (RθJC) that ensures effective heat dissipation.
  9. Body Diode: The MOSFET includes an intrinsic body diode, which allows for current flow in the reverse direction, useful in applications like H-bridge configurations for motor control.

Applications:

  • Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
  • Motor Control: Ideal for driving DC motors and other inductive loads due to its fast switching and high current capabilities.
  • Inverters: Commonly found in inverter circuits for renewable energy applications, such as solar inverters.
  • Lighting: Utilized in LED drivers and other lighting control applications.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): Maximum of ±20V.
  • Drain-Source Breakdown Voltage (V(BR)DSS): 100V minimum.
  • Input Capacitance (C_iss): Typically around 1,200 pF, which affects the gate drive requirements.

Conclusion:

The IRF540NSTRLPBF is a robust and versatile N-channel MOSFET that offers high performance in power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for a wide range of electronic applications.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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