![](/images/home/default.png)
![icon](/images/products/arrowIcon.webp)
![icon](/images/products/fsr.webp)
IRF6215PBF
- Manufacturer's Part No.:IRF6215PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 150V 13A TO-220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 58086
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.42900 | US $4.43 |
10+ | US $3.98610 | US $39.86 |
30+ | US $3.10030 | US $93.01 |
100+ | US $2.54668 | US $254.67 |
500+ | US $2.43595 | US $1217.98 |
1000+ | US $2.21450 | US $2214.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6215PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height15.24mm
- Length10.5156mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTube
- Published1998
- Rise Time36ns
- Vgs (Max)±20V
- Lead Pitch2.54mm
- Resistance290mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-4 V
- Part StatusNot For New Designs
- SubcategoryOther Transistors
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time240 ns
- Current Rating-13A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)37 ns
- Factory Lead Time14 Weeks
- Power Dissipation110W
- Threshold Voltage-4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-150V
- Dual Supply Voltage-150V
- Radiation HardeningNo
- Turn-Off Delay Time53 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max110W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs290m Ω @ 6.6A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-13A
- Drain to Source Voltage (Vdss)150V
- Pulsed Drain Current-Max (IDM)44A
- Drain to Source Breakdown Voltage-150V
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C13A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
SHIPPING GUIDE
Shipping Methods
Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.
Shipping Cost
Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.
Delivery Time
We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.
Professional Platform
Full-speed Delivery
Wide Variety of Products
365 Days of Quality Assurance