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IRF6609TRPBF

  • In Stock: 480000
  • Available: 3792

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.40000US $2.40
10+US $1.60000US $16.00
30+US $1.20000US $36.00
100+US $0.96000US $96.00
500+US $0.88000US $440.00
1000+US $0.80000US $800.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF6609TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    5.05mm
  • Height
    506μm
  • Length
    6.35mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Rise Time
    95ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Current Rating
    31A
  • Number of Pins
    5
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    DirectFET™ Isometric MT
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    9.8 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Power Dissipation
    89W
  • Terminal Position
    BOTTOM
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Turn On Delay Time
    24 ns
  • Vgs(th) (Max) @ Id
    2.45V @ 250μA
  • Voltage - Rated DC
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    26 ns
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    1.8W Ta 89W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    2m Ω @ 31A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    240 mJ
  • Continuous Drain Current (ID)
    150mA
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.002Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    6290pF @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    31A Ta 150A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-XBCC-N3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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