IRF6609TRPBF
- Manufacturer's Part No.:IRF6609TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 20V 31A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 480000
- Available: 3792
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.40000 | US $2.40 |
10+ | US $1.60000 | US $16.00 |
30+ | US $1.20000 | US $36.00 |
100+ | US $0.96000 | US $96.00 |
500+ | US $0.88000 | US $440.00 |
1000+ | US $0.80000 | US $800.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6609TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height506μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time95ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Current Rating31A
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric MT
- Case ConnectionDRAIN
- Fall Time (Typ)9.8 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation89W
- Terminal PositionBOTTOM
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time24 ns
- Vgs(th) (Max) @ Id2.45V @ 250μA
- Voltage - Rated DC20V
- Radiation HardeningNo
- Turn-Off Delay Time26 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max1.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs2m Ω @ 31A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs69nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)240 mJ
- Continuous Drain Current (ID)150mA
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.002Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds6290pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C31A Ta 150A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-XBCC-N3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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