IRF6613TRPBF
- Manufacturer's Part No.:IRF6613TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 40V 23A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 102506
- Available: 102506
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.66108 | US $3.66 |
10+ | US $3.29497 | US $32.95 |
30+ | US $2.56276 | US $76.88 |
100+ | US $2.10512 | US $210.51 |
500+ | US $2.01359 | US $1006.80 |
1000+ | US $1.83054 | US $1830.54 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6613TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.0546mm
- Height508μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time47ns
- Vgs (Max)±20V
- Resistance3.4MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Current Rating23A
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric MT
- Case ConnectionDRAIN
- Fall Time (Typ)4.9 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time12 Weeks
- Power Dissipation89W
- Terminal PositionBOTTOM
- Threshold Voltage2.25V
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id2.25V @ 250μA
- Voltage - Rated DC40V
- Radiation HardeningNo
- Turn-Off Delay Time27 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs3.4m Ω @ 23A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs63nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)200 mJ
- Continuous Drain Current (ID)150mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds5950pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C23A Ta 150A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-XBCC-N3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)3 (168 Hours)
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