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IRF6614TR1

  • Available: 3699

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF6614TR1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.95mm
  • FET Type
    N-Channel
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Vgs (Max)
    ±20V
  • Rds On Max
    8.3 mΩ
  • Resistance
    8.3mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.8 V
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    7
  • Package / Case
    DirectFET™ Isometric ST
  • Input Capacitance
    2.56nF
  • Power Dissipation
    2.1W
  • Threshold Voltage
    1.8V
  • Vgs(th) (Max) @ Id
    2.25V @ 250μA
  • Turn-Off Delay Time
    18 ns
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    2.1W Ta 42W Tc
  • Reverse Recovery Time
    15 ns
  • Rds On (Max) @ Id, Vgs
    8.3mOhm @ 12.7A, 10V
  • Supplier Device Package
    DIRECTFET™ ST
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Drain to Source Resistance
    5.9mOhm
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    10.1A
  • Drain to Source Voltage (Vdss)
    40V
  • Drain to Source Breakdown Voltage
    40V
  • Input Capacitance (Ciss) (Max) @ Vds
    2560pF @ 20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    12.7A Ta 55A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS non-compliant
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)

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