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IRF6629TR1PBF
- Manufacturer's Part No.:IRF6629TR1PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 25V 29A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3531
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- Available: 3531
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6629TR1PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height506μm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time67ns
- Vgs (Max)±20V
- Rds On Max2.1 mΩ
- Resistance2.1MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating29A
- Number of Pins5
- Package / CaseDirectFET™ Isometric MX
- Fall Time (Typ)7.4 ns
- Input Capacitance4.26nF
- Power Dissipation100W
- Threshold Voltage1.8V
- Turn On Delay Time20 ns
- Vgs(th) (Max) @ Id2.35V @ 100μA
- Voltage - Rated DC25V
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time20 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 100W Tc
- Rds On (Max) @ Id, Vgs2.1mOhm @ 29A, 10V
- Supplier Device PackageDIRECTFET™ MX
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Drain to Source Resistance2.7mOhm
- Gate Charge (Qg) (Max) @ Vgs51nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)23A
- Drain to Source Voltage (Vdss)25V
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds4260pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C29A Ta 180A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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