IRF6635TRPBF
- Manufacturer's Part No.:IRF6635TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 32A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 5000
- Available: 3804
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.90000 | US $2.90 |
10+ | US $2.61000 | US $26.10 |
30+ | US $2.03000 | US $60.90 |
100+ | US $1.66750 | US $166.75 |
500+ | US $1.59500 | US $797.50 |
1000+ | US $1.45000 | US $1450.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6635TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height506μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time13ns
- Vgs (Max)±20V
- Resistance1.8MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Current Rating32A
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric MX
- Case ConnectionDRAIN
- Fall Time (Typ)8.3 ns
- Factory Lead Time13 Weeks
- Power Dissipation89W
- Terminal PositionBOTTOM
- Threshold Voltage1.8V
- Number of Elements1
- Turn On Delay Time21 ns
- Vgs(th) (Max) @ Id2.35V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time33 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs1.8m Ω @ 32A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs71nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)200 mJ
- Continuous Drain Current (ID)32mA
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds5970pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C32A Ta 180A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-XBCC-N3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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