IRF6643TRPBF
- Manufacturer's Part No.:IRF6643TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 150V 6.2A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 150000
- Available: 99089
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.26000 | US $5.26 |
10+ | US $4.73400 | US $47.34 |
30+ | US $3.68200 | US $110.46 |
100+ | US $3.02450 | US $302.45 |
500+ | US $2.89300 | US $1446.50 |
1000+ | US $2.63000 | US $2630.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6643TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.0546mm
- Height508μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time5ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric MZ
- Case ConnectionDRAIN
- Fall Time (Typ)4.4 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time12 Weeks
- Power Dissipation89W
- Terminal PositionBOTTOM
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time9.2 ns
- Vgs(th) (Max) @ Id4.9V @ 150μA
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs34.5m Ω @ 7.6A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)6.2A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)76A
- Drain to Source Breakdown Voltage150V
- Input Capacitance (Ciss) (Max) @ Vds2340pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C6.2A Ta 35A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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