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IRF6644TR1PBF
- Manufacturer's Part No.:IRF6644TR1PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 10.3A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 15000
- Available: 3680
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.67000 | US $2.67 |
10+ | US $1.78000 | US $17.80 |
30+ | US $1.33500 | US $40.05 |
100+ | US $1.06800 | US $106.80 |
500+ | US $0.97900 | US $489.50 |
1000+ | US $0.89000 | US $890.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6644TR1PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height506μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2005
- Rise Time26ns
- Vgs (Max)±20V
- Resistance13MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2.8 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time63 ns
- Current Rating10.3A
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric MN
- Case ConnectionDRAIN
- Fall Time (Typ)16 ns
- Power Dissipation2.8W
- Terminal PositionBOTTOM
- Threshold Voltage2.8V
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time17 ns
- Vgs(th) (Max) @ Id4.8V @ 150μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time34 ns
- Element ConfigurationSingle
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs13m Ω @ 10.3A, 10V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)86 mJ
- Continuous Drain Current (ID)8.3A
- Pulsed Drain Current-Max (IDM)228A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds2210pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C10.3A Ta 60A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-XBCC-N3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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