EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

IRF6645TRPBF

  • In Stock: 6000
  • Available: 137353

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.30000US $2.30
10+US $2.07000US $20.70
30+US $1.61000US $48.30
100+US $1.32250US $132.25
500+US $1.26500US $632.50
1000+US $1.15000US $1150.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF6645TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.95mm
  • Height
    410μm
  • Length
    3.95mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • Rise Time
    5ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Current Rating
    5.7A
  • Number of Pins
    7
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    DirectFET™ Isometric SJ
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    5.1 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    42W
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Turn On Delay Time
    9.2 ns
  • Vgs(th) (Max) @ Id
    4.9V @ 50μA
  • Voltage - Rated DC
    100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    18 ns
  • Operating Temperature
    -40°C~150°C TJ
  • Power Dissipation-Max
    2.2W Ta 42W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 5.7A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    29 mJ
  • Continuous Drain Current (ID)
    5.7mA
  • Drain-source On Resistance-Max
    0.035Ohm
  • Pulsed Drain Current-Max (IDM)
    45A
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    890pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    5.7A Ta 25A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XBCC-N3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance