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IRF6648TR1
- Manufacturer's Part No.:IRF6648TR1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 60V 86A DIRECTFET
- Datasheet:
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- In Stock: 3717
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- Available: 3717
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6648TR1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Published2006
- Rise Time29ns
- Vgs (Max)±20V
- Rds On Max7 mΩ
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating86A
- Number of Pins7
- Package / CaseDirectFET™ Isometric MN
- Fall Time (Typ)13 ns
- Input Capacitance2.12nF
- Power Dissipation2.8W
- Threshold Voltage4V
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id4.9V @ 150μA
- Voltage - Rated DC60V
- Dual Supply Voltage60V
- Radiation HardeningNo
- Turn-Off Delay Time28 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Reverse Recovery Time31 ns
- Rds On (Max) @ Id, Vgs7mOhm @ 17A, 10V
- Supplier Device PackageDIRECTFET™ MN
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Drain to Source Resistance2MOhm
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)86A
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds2120pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C86A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- Moisture Sensitivity Level (MSL)2 (1 Year)
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