IRF6655TRPBF
- Manufacturer's Part No.:IRF6655TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 4.2A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 14400
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.89999 | US $1.90 |
10+ | US $1.26666 | US $12.67 |
30+ | US $0.94999 | US $28.50 |
100+ | US $0.76000 | US $76.00 |
500+ | US $0.69666 | US $348.33 |
1000+ | US $0.63333 | US $633.33 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6655TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9624mm
- Height508μm
- Length4.826mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time2.8ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Current Rating4.2A
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric SH
- Case ConnectionDRAIN
- Fall Time (Typ)4.3 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time13 Weeks
- Power Dissipation42W
- Terminal PositionBOTTOM
- Number of Elements1
- Turn On Delay Time7.4 ns
- Vgs(th) (Max) @ Id4.8V @ 25μA
- Voltage - Rated DC100V
- Radiation HardeningNo
- Turn-Off Delay Time14 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.2W Ta 42W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs62m Ω @ 5A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs11.7nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)11 mJ
- Continuous Drain Current (ID)4.2mA
- Drain-source On Resistance-Max0.062Ohm
- Pulsed Drain Current-Max (IDM)34A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta 19A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N2
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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