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IRF6665TRPBF
- Manufacturer's Part No.:IRF6665TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 4.2A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 207548
- Available: 207548
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.51860 | US $1.52 |
10+ | US $1.01240 | US $10.12 |
30+ | US $0.75930 | US $22.78 |
100+ | US $0.60744 | US $60.74 |
500+ | US $0.55682 | US $278.41 |
1000+ | US $0.50620 | US $506.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6665TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.95mm
- Height506μm
- Length4.826mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time2.8ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating4.2A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseDirectFET™ Isometric SH
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)4.3 ns
- Factory Lead Time12 Weeks
- Power Dissipation42W
- Terminal PositionBOTTOM
- Threshold Voltage5V
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time7.4 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Voltage - Rated DC100V
- Radiation HardeningNo
- Turn-Off Delay Time14 ns
- Element ConfigurationSingle
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.2W Ta 42W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs62m Ω @ 5A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)3.4A
- Drain-source On Resistance-Max0.062Ohm
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta 19A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XBCC-N2
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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