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IRF6668TR1PBF
- Manufacturer's Part No.:IRF6668TR1PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 80V 55A DIRECTFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3789
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- Available: 3789
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6668TR1PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width5.05mm
- Height533.4μm
- Length6.35mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2006
- Rise Time13ns
- Vgs (Max)±20V
- Rds On Max15 mΩ
- Resistance15mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating55A
- Number of Pins5
- Package / CaseDirectFET™ Isometric MZ
- Fall Time (Typ)23 ns
- Input Capacitance1.32nF
- Power Dissipation2.8W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time19 ns
- Vgs(th) (Max) @ Id4.9V @ 100μA
- Voltage - Rated DC80V
- Dual Supply Voltage80V
- Radiation HardeningNo
- Turn-Off Delay Time7.1 ns
- Element ConfigurationDual
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V
- Supplier Device PackageDIRECTFET™ MZ
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Drain to Source Resistance12mOhm
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)44A
- Drain to Source Voltage (Vdss)80V
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds1320pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C55A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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