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IRF6718L2TR1PBF
- Manufacturer's Part No.:IRF6718L2TR1PBF
- Manufacturer:
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- Series:HEXFET®
- Description:MOSFET N-CH 25V 61A DIRECTFET L6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3639
- Price: please call
- Available: 3639
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF6718L2TR1PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width7.1mm
- Height508μm
- Length9.144mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2011
- Rise Time140ns
- Vgs (Max)±20V
- Rds On Max700 μΩ
- Resistance500kOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.9 V
- Part StatusObsolete
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time59 ns
- Number of Pins13
- Package / CaseDirectFET™ Isometric L6
- Fall Time (Typ)53 ns
- Input Capacitance6.5nF
- Power Dissipation4.3W
- Threshold Voltage1.9V
- Turn On Delay Time67 ns
- Vgs(th) (Max) @ Id2.35V @ 150μA
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time47 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max4.3W Ta 83W Tc
- Rds On (Max) @ Id, Vgs0.7mOhm @ 61A, 10V
- Supplier Device PackageDIRECTFET L6
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Drain to Source Resistance700μOhm
- Gate Charge (Qg) (Max) @ Vgs96nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)61A
- Drain to Source Voltage (Vdss)25V
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds6500pF @ 13V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C61A Ta 270A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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