IRF7103TRPBF
- Manufacturer's Part No.:IRF7103TRPBF
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- Series:HEXFET®
- Description:MOSFET 2N-CH 50V 3A 8-SOIC
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- In Stock: 68881
- Available: 246556
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.41778 | US $0.42 |
10+ | US $0.27852 | US $2.79 |
30+ | US $0.20889 | US $6.27 |
100+ | US $0.16711 | US $16.71 |
500+ | US $0.15319 | US $76.60 |
1000+ | US $0.13926 | US $139.26 |
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- Description
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The IRF7103TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for a variety of applications, including power management, motor control, and switching applications, where efficiency and reliability are critical.
Key Features:
- Type: N-channel MOSFET
- Package: The IRF7103TRPBF is typically housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heat sinks.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which is beneficial for high-current applications.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V, which contributes to reduced power losses during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, allowing for efficient switching with lower gate drive voltages.
- Switching Speed: The IRF7103TRPBF features fast switching capabilities, making it suitable for high-frequency applications.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in managing heat dissipation effectively during operation.
Applications:
- Power Supplies: Used in DC-DC converters and power management circuits.
- Motor Drives: Suitable for driving DC motors and other inductive loads.
- Switching Regulators: Ideal for use in synchronous rectification and other switching applications.
- Automotive Applications: Can be used in automotive power systems due to its robustness and reliability.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Pulsed Drain Current (I_D, pulsed): Up to 100A
- Body Diode Characteristics: The device includes an intrinsic body diode, which can conduct in reverse and is rated for a certain reverse recovery time, making it suitable for applications that require freewheeling diodes.
Reliability:
The IRF7103TRPBF is designed to meet stringent reliability standards, making it suitable for industrial and automotive applications. It is also RoHS compliant, ensuring that it meets environmental regulations.
Conclusion:
The IRF7103TRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that offers high current handling, low on-resistance, and fast switching capabilities. Its robust design and thermal performance make it an excellent choice for a wide range of applications in power electronics.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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