EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

IRF7105TRPBF

  • In Stock: 17850
  • Available: 287085

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.66600US $0.67
10+US $0.44400US $4.44
30+US $0.33300US $9.99
100+US $0.26640US $26.64
500+US $0.24420US $122.10
1000+US $0.22200US $222.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7105TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • Base Part Number
    IRF7105PBF
  • Number of Terminations
    8
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2003
  • Current Rating
    3.5A
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • Max Power Dissipation
    2W
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Power Dissipation
    2W
  • Max Junction Temperature (Tj)
    150°C
  • Number of Channels
    2
  • Turn On Delay Time
    7 ns
  • Turn-Off Delay Time
    45 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM)
    14A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID)
    3.5A
  • Resistance
    100mOhm
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    25V
  • Threshold Voltage
    1V
  • FET Type
    N and P-Channel
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • FET Feature
    Standard
  • Rise Time
    13ns
  • Fall Time (Typ)
    37 ns
  • Nominal Vgs
    3 V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A 2.3A
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 1A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance