IRF7105TRPBF
- Manufacturer's Part No.:IRF7105TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N/P-CH 25V 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 10000
- Available: 287085
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.59364 | US $0.59 |
10+ | US $0.39576 | US $3.96 |
30+ | US $0.29682 | US $8.90 |
100+ | US $0.23746 | US $23.75 |
500+ | US $0.21767 | US $108.84 |
1000+ | US $0.19788 | US $197.88 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7105TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time12 Weeks
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- Base Part NumberIRF7105PBF
- Number of Terminations8
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published2003
- Current Rating3.5A
- Additional FeatureULTRA LOW RESISTANCE
- Height1.75mm
- Length4.9784mm
- Width3.9878mm
- Max Power Dissipation2W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Power Dissipation2W
- Max Junction Temperature (Tj)150°C
- Number of Channels2
- Turn On Delay Time7 ns
- Turn-Off Delay Time45 ns
- Operating ModeENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM)14A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)3.5A
- Resistance100mOhm
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- Threshold Voltage1V
- FET TypeN and P-Channel
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- FET FeatureStandard
- Rise Time13ns
- Fall Time (Typ)37 ns
- Nominal Vgs3 V
- Current - Continuous Drain (Id) @ 25°C3.5A 2.3A
- Rds On (Max) @ Id, Vgs100m Ω @ 1A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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