IRF7309TRPBF

The IRF7309TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for a variety of applications, including power management, motor control, and switching applications, where efficiency and reliability are critical.

Key Features:

1. Type: N-channel MOSFET

2. Package: The IRF7309TRPBF is typically housed in a TO-220 package, which provides excellent thermal performance and is suitable for high-power applications. The package design allows for easy mounting on heatsinks, enhancing heat dissipation.

3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.

4. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, depending on the thermal conditions and the PCB layout. This high current capability makes it ideal for applications requiring significant power handling.

5. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses, enhancing overall efficiency.

6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, allowing for easy drive with standard logic levels.

7. Switching Speed: The IRF7309TRPBF features fast switching capabilities, which are essential for high-frequency applications. This characteristic helps in reducing switching losses and improving overall system efficiency.

8. Thermal Resistance: The device has a low thermal resistance, which allows for effective heat dissipation. This is crucial for maintaining performance and reliability in high-power applications.

9. Applications: Common applications include DC-DC converters, power supplies, motor drivers, and other power management systems. Its robust design makes it suitable for both consumer electronics and industrial applications.

10. RoHS Compliance: The IRF7309TRPBF is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is environmentally friendly and safe for use in various applications.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 120A
• Total Gate Charge (Q_g): Typically around 40 nC, which indicates the amount of charge required to turn the MOSFET on and off.

Conclusion:

The IRF7309TRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring high current and low on-resistance. Its robust design, combined with excellent thermal performance and fast switching capabilities, makes it a reliable choice for engineers looking to optimize power management solutions.