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IRF7313TRPBF

  • In Stock: 5000
  • Available: 261964

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.66462US $0.66
10+US $0.44308US $4.43
30+US $0.33231US $9.97
100+US $0.26585US $26.58
500+US $0.24369US $121.85
1000+US $0.22154US $221.54

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7313TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    4.05mm
  • Height
    1.75mm
  • Length
    4.9784mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • Rise Time
    8.9ns
  • Resistance
    29mOhm
  • FET Feature
    Standard
  • Nominal Vgs
    1 V
  • Part Status
    Active
  • Row Spacing
    6.3 mm
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    68 ns
  • Terminal Form
    GULL WING
  • Current Rating
    6.5A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    17 ns
  • Base Part Number
    IRF7313PBF
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2W
  • Threshold Voltage
    1V
  • Additional Feature
    HIGH RELIABILITY, AVALANCHE RATED
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    8.1 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Voltage - Rated DC
    30V
  • Dual Supply Voltage
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    26 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 5.8A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    6.5A
  • Max Junction Temperature (Tj)
    150°C
  • Pulsed Drain Current-Max (IDM)
    30A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    650pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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