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IRF7314PBF

  • In Stock: 300000
  • Available: 2215

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.62400US $0.62
10+US $0.41600US $4.16
30+US $0.31200US $9.36
100+US $0.24960US $24.96
500+US $0.22880US $114.40
1000+US $0.20800US $208.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7314PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Part Status
    Discontinued
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    39 Weeks
  • Packaging
    Tube
  • Subcategory
    Other Transistors
  • Base Part Number
    IRF7314PBF
  • Surface Mount
    YES
  • Number of Terminations
    8
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Published
    1997
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • JEDEC-95 Code
    MS-012AA
  • Power - Max
    2W
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Power Dissipation-Max (Abs)
    1.4W
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    5.3A
  • Drain-source On Resistance-Max
    0.058Ohm
  • Pulsed Drain Current-Max (IDM)
    21A
  • DS Breakdown Voltage-Min
    20V
  • Avalanche Energy Rating (Eas)
    150 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    20V
  • FET Type
    2 P-Channel (Dual)
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    780pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 2.9A, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • JESD-30 Code
    R-PDSO-G8

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