IRF7319TRPBF
- Manufacturer's Part No.:IRF7319TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N/P-CH 30V 8SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 1918
- Available: 196576
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.87447 | US $0.87 |
10+ | US $0.58298 | US $5.83 |
30+ | US $0.43724 | US $13.12 |
100+ | US $0.34979 | US $34.98 |
500+ | US $0.32064 | US $160.32 |
1000+ | US $0.29149 | US $291.49 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7319TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET TypeN and P-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published1997
- Rise Time13ns
- Resistance29mOhm
- FET FeatureStandard
- Nominal Vgs1 V
- Part StatusActive
- Row Spacing6.3 mm
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating6.5A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)32 ns
- Base Part NumberIRF7319PBF
- Factory Lead Time12 Weeks
- Power Dissipation2W
- Terminal PositionDUAL
- Threshold Voltage1V
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time34 ns
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs29m Ω @ 5.8A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)6.5A
- Pulsed Drain Current-Max (IDM)30A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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