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IRF7319TRPBF

  • In Stock: 1918
  • Available: 196576

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.87447US $0.87
10+US $0.58298US $5.83
30+US $0.43724US $13.12
100+US $0.34979US $34.98
500+US $0.32064US $160.32
1000+US $0.29149US $291.49

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7319TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.4986mm
  • Length
    4.9784mm
  • FET Type
    N and P-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • Rise Time
    13ns
  • Resistance
    29mOhm
  • FET Feature
    Standard
  • Nominal Vgs
    1 V
  • Part Status
    Active
  • Row Spacing
    6.3 mm
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    6.5A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    32 ns
  • Base Part Number
    IRF7319PBF
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1V
  • Additional Feature
    AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    34 ns
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 5.8A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    6.5A
  • Pulsed Drain Current-Max (IDM)
    30A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    650pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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