IRF7329PBF
- Manufacturer's Part No.:IRF7329PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2P-CH 12V 9.2A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 5000
- Available: 2830
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.72000 | US $0.72 |
10+ | US $0.48000 | US $4.80 |
30+ | US $0.36000 | US $10.80 |
100+ | US $0.28800 | US $28.80 |
500+ | US $0.26400 | US $132.00 |
1000+ | US $0.24000 | US $240.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7329PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time8.6ns
- Resistance17MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs-900 mV
- Part StatusDiscontinued
- Row Spacing6.3 mm
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-9.2A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)260 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberIRF7329PBF
- Factory Lead Time13 Weeks
- Power Dissipation2W
- Threshold Voltage-900mV
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id900mV @ 250μA
- Voltage - Rated DC-12V
- Dual Supply Voltage-12V
- Radiation HardeningNo
- Turn-Off Delay Time340 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs17m Ω @ 9.2A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs57nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)-9.2A
- Drain to Source Voltage (Vdss)12V
- Drain to Source Breakdown Voltage-12V
- Input Capacitance (Ciss) (Max) @ Vds3450pF @ 10V
- Current - Continuous Drain (Id) @ 25°C9.2A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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