IRF7351TRPBF
- Manufacturer's Part No.:IRF7351TRPBF
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- Series:HEXFET®
- Description:MOSFET 2N-CH 60V 8A 8-SOIC
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- In Stock: 24250
- Available: 21111
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.02959 | US $1.03 |
10+ | US $0.68639 | US $6.86 |
30+ | US $0.51479 | US $15.44 |
100+ | US $0.41184 | US $41.18 |
500+ | US $0.37752 | US $188.76 |
1000+ | US $0.34320 | US $343.20 |
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- Description
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The IRF7351TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Package: The IRF7351TRPBF is typically housed in a TO-220 package, which provides good thermal performance and is easy to mount on a heatsink for enhanced heat dissipation.
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: The device can handle a continuous drain current (I_D) of approximately 50A, which allows it to drive significant loads.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, which means it begins to conduct at relatively low gate voltages, making it suitable for logic-level applications.
- Switching Speed: The IRF7351TRPBF features fast switching capabilities, which is essential for applications requiring rapid on/off control, such as in PWM (Pulse Width Modulation) circuits.
- Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding thermal environments. Its thermal resistance is designed to facilitate effective heat dissipation.
Applications:
- Power Supplies: Used in DC-DC converters and power management circuits to efficiently switch power.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- LED Drivers: Can be used in circuits designed to drive LED lighting systems.
- Battery Management Systems: Ideal for applications in electric vehicles and renewable energy systems where efficient power management is critical.
Additional Information:
- RoHS Compliance: The IRF7351TRPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is environmentally friendly and safe for use in consumer electronics.
- Reliability: Infineon Technologies is known for producing high-quality semiconductor devices, and the IRF7351TRPBF is no exception, offering reliability and performance in various applications.
In summary, the IRF7351TRPBF is a robust and efficient N-channel MOSFET suitable for a wide range of applications, characterized by its low on-resistance, high current handling capability, and fast switching performance.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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