EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

IRF7379PBF

  • Available: 3582

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7379PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.9878mm
  • Height
    1.4986mm
  • Length
    4.9784mm
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    17ns
  • FET Feature
    Standard
  • Nominal Vgs
    1 V
  • Part Status
    Obsolete
  • Row Spacing
    6.3 mm
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    5.8A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    18 ns
  • Base Part Number
    IRF7379PBF
  • Power Dissipation
    2.5W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1V
  • Additional Feature
    AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Dual Supply Voltage
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    25 ns
  • Max Power Dissipation
    2.5W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 5.8A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    4.3A
  • Drain-source On Resistance-Max
    0.045Ohm
  • Pulsed Drain Current-Max (IDM)
    46A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    520pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A 4.3A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance