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IRF7379

  • Available: 3978

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRF7379
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • FET Type
    N and P-Channel
  • Packaging
    Tube
  • Published
    1998
  • FET Feature
    Standard
  • Part Status
    Obsolete
  • Power - Max
    2.5W
  • REACH Status
    REACH Unaffected
  • Configuration
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
  • JEDEC-95 Code
    MS-012AA
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Terminal Position
    DUAL
  • Additional Feature
    AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 5.8A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    5.8A
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.045Ohm
  • Pulsed Drain Current-Max (IDM)
    46A
  • Input Capacitance (Ciss) (Max) @ Vds
    520pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A 4.3A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PDSO-G8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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