IRF7380TRPBF
- Manufacturer's Part No.:IRF7380TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 80V 3.6A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 253000
- Available: 174381
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.43000 | US $2.43 |
10+ | US $1.62000 | US $16.20 |
30+ | US $1.21500 | US $36.45 |
100+ | US $0.97200 | US $97.20 |
500+ | US $0.89100 | US $445.50 |
1000+ | US $0.81000 | US $810.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRF7380TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width3.9878mm
- Height1.4986mm
- Length4.9784mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2008
- Rise Time10ns
- Resistance73MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating3.6A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)17 ns
- Base Part NumberIRF7380PBF
- Factory Lead Time12 Weeks
- Power Dissipation2W
- Threshold Voltage4V
- Number of Elements2
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC80V
- Radiation HardeningNo
- Turn-Off Delay Time41 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs73m Ω @ 2.2A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)75 mJ
- Continuous Drain Current (ID)3.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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